1. American International University-Bangladesh
  2. Faculty of Engineering
  3. Publications From Faculty of Engineering
Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2012
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dc.contributor.authorHasan, Md. Rokib-
dc.contributor.authorIslam, Md. Rabiul-
dc.contributor.authorHassan, Md. Kamrul-
dc.contributor.authorMannan, Mohammad Abdul-
dc.date.accessioned2024-01-16T10:21:14Z-
dc.date.available2024-01-16T10:21:14Z-
dc.date.issued2018-
dc.identifier.citationMd. Rokib Hasan, Md. Rabiul Islam, Md. Kamrul Hassan and Mohammad Abdul Mannan, “Sub-nano Regime DG-MOSFETs,” Journal of Semiconductor Devices and Circuits (STM Journals), Vol. 5, Issue 3, pp. 1-7, 2018.en_US
dc.identifier.issn2455-3379-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/2012-
dc.description.abstractThe significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric Field (EF).en_US
dc.language.isoenen_US
dc.publisherSTM Journalsen_US
dc.subjectTransfer characteristics curveen_US
dc.subjectDouble gate MOSFETsen_US
dc.subjectIONen_US
dc.subjectDIBLen_US
dc.subjectSSen_US
dc.titleSub-nano Regime DG-MOSFETsen_US
dc.typeArticleen_US
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