Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2439
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBaker, Sayed Muhammad-
dc.contributor.authorBasak, Rinku-
dc.date.accessioned2024-09-25T04:39:52Z-
dc.date.available2024-09-25T04:39:52Z-
dc.date.issued2017-06-
dc.identifier.urihttps://doi.org/10.53799/ajse.v16i2.73-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/2439-
dc.description.abstractIn this work, the effects on the performance characteristics of a In0.1558Ga0.8442N / Al0.0416Ga0.9584N 3QW separate confinement heterostrcture 450 nm true blue edgeemitting laser are presented by considering different injection current. At the temperature of 300 K, the threshold current of the laser is 11 mA. The peak material gain for the designed laser is obtained as 1106 cm-1 and further used for the analysis of the performance characteristics of the designed doubleheterostructure laser for the variation of injection current. The injection current can be applied to the device is at around 12 to 15 times of the threshold current. At the value of injection current 152 mA, the maximum output power of the laser is 256.4 mW, the maximum resonance frequency is 14.5 GHz and the corresponding modulation bandwidth is 25.3 GHz at the temperature of 300 K.en_US
dc.language.isoenen_US
dc.subjectMQWen_US
dc.subjecttrue blue laseren_US
dc.subjectresonance frequencyen_US
dc.subjectmodulation bandwidthen_US
dc.subjectvarying injection currenten_US
dc.titleOptimized High Performance Characteristics of a designed 450 nm InGaN/AlGaN True Blue Laser Considering Different Injection Currenten_US
dc.typeArticleen_US
Appears in Collections:Publications From Faculty of Engineering

Files in This Item:
File Description SizeFormat 
J11_Dr. Rinku Basak_DSpace_Publication_FE.docx3.31 MBMicrosoft Word XMLView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.