Please use this identifier to cite or link to this item:
http://dspace.aiub.edu:8080/jspui/handle/123456789/2535
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mohd Izhar Sapeli, Megat | - |
dc.contributor.author | Chelvanathan, Puvaneswaran | - |
dc.contributor.author | Yusoff, Yulisa | - |
dc.contributor.author | Rahman, Kazi Sajedur | - |
dc.contributor.author | Rafiq, Md Khan Sobayel | - |
dc.contributor.author | Shahahmadi, Seyed Ahmad | - |
dc.contributor.author | Nowshad, Amin | - |
dc.date.accessioned | 2024-11-11T07:14:45Z | - |
dc.date.available | 2024-11-11T07:14:45Z | - |
dc.date.issued | 2024-08 | - |
dc.identifier.issn | 0925-3467 | - |
dc.identifier.uri | http://dspace.aiub.edu:8080/jspui/handle/123456789/2535 | - |
dc.description.abstract | Intermediate band (IB) materials, such as chromium-doped Cu2ZnSnS4 (CZTS:Cr) show promise for surpassing the Shockley-Queisser limit in solar cells. This study explores the effects of sulphur variation in this film. Sulphurization results in a layered structure, with Cr-poor micron-sized grains on top and Cr-rich nanograins at the bottom preventing complete crystallization. Optimization improves the Cu2ZnSnS4 (CZTS) crystallization and introduces additional absorption peaks at 1.15 eV and 1.31 eV, alongside the fundamental 1.55 eV absorption using 47.1 mg of sulphur content. CZTS:Cr device fabricated achieve a threefold increase in current density (Jsc) compared to undoped samples. These findings are crucial for advancing intermediate band solar cell (IBSC) based on CZTS:Cr IB material. | en_US |
dc.description.sponsorship | Ministry of Higher Education of Malaysia (MOHE) (grant number FRGS/1/2022/TK08/UKM/02/29). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | Sputtering | en_US |
dc.subject | Cr-doped CZTS | en_US |
dc.subject | Intermediate band solar cell | en_US |
dc.title | Elucidating the effects of Cr–S variations in Cr-doped CZTS for intermediate band solar cell applications | en_US |
dc.type | Article | en_US |
Appears in Collections: | Publications From Faculty of Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
DSpace_Publication_Info_Upload_FE_IAna ID7080.docx | 2.93 MB | Microsoft Word XML | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.