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dc.contributor.authorPettersen, F J-
dc.contributor.authorFerdous, Humayra-
dc.contributor.authorH, Kalvoy-
dc.contributor.authorMartinsen, Ø G-
dc.contributor.authorJ O, Høgetveit-
dc.date.accessioned2023-11-07T15:17:41Z-
dc.date.available2023-11-07T15:17:41Z-
dc.date.issued2014-
dc.identifier.citation11en_US
dc.identifier.issn0967-3334-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/1670-
dc.description.abstractFocused impedance measurements (FIM) are used in several fields, and address the problem of measuring the volume impedance of an object within a volume conductor. Several electrode configurations are possible, and these have different properties. Sensitivity fields of four configurations have been investigated. We present one new development of an existing FIM configuration, and we made finite element models of the configurations to analyse and compare them both graphically and numerically. The models developed have a variable-sized mesh that allows us to build complex models that fit easily in computer memory. We found that one configuration in particular, FIM4, was superior to the others in most aspects. We also analysed the effects of very high sensitivities in and under the electrodes. We found that even if the sensitivity is very high under the electrodes, the effects of inhomogeneities were not as high as one might expect.en_US
dc.description.sponsorshipNorwegian State Educational Loan Fund (Lankassen),en_US
dc.language.isoen_USen_US
dc.publisherPhysiological Measurementen_US
dc.relation.ispartofseries35 (2014);page 1067–1082-
dc.subjectKeywords: focused impedance measurement, finite element model, simulation, three Rsen_US
dc.titleComparison of four different FIM configurations—a simulation studyen_US
dc.typeArticleen_US
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