Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2436
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dc.contributor.authorAlam, Tawsif Ibne Alam-
dc.contributor.authorBasak, Rinku-
dc.date.accessioned2024-09-25T04:39:20Z-
dc.date.available2024-09-25T04:39:20Z-
dc.date.issued2014-08-
dc.identifier.urihttps://orp.aiub.edu/ajse-13-01-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/2436-
dc.description.abstractIn this work, comparative performance analysis and optimization of proposed 635nm Quantum Well Red Laser is performed. At 300K, the peak material gain of an unstrained device is obtained along with the threshold conditions of the device which has been used for finding the solution to the coupled rate equations. The rate equation solutions are used to find a steady state output power of 97.97mW and a maximum -3dB bandwidth of 15.1GHz at an injection current of 90mA for the unstrained quantum well device, with a threshold current as low as 15.1mA and a peak emission wavelength at 635nm. Furthermore, introducing compressive strain of 0.42% into the quantum wells significantly reduces the threshold current to 7.7mA, increasing the output power to 107.78mW and -3dB bandwidth to 23.7GHz,at a constant peak emission wavelength of 635nm, stating a superior performance over the unstrained QW device.en_US
dc.language.isoenen_US
dc.publisherAIUB Office of Research and Publicationen_US
dc.titleComparative Performance Analysis and Optimization of 635nm Multiple Quantum Well Red Lasersen_US
dc.typeArticleen_US
Appears in Collections:Publications From Faculty of Engineering

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