A Semi-Analytical Subthreshold Drain Current Deflection Model for the Asymmetric Pocket Implanted Nano Scale n-MOSFET

Bhuyan, Muhibul Haque; Khosru, Quazi Deen Mohd

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DC Field	Value	Language
dc.contributor.author	Bhuyan, Muhibul Haque	-
dc.contributor.author	Khosru, Quazi Deen Mohd	-
dc.date.accessioned	2022-05-16T09:49:21Z	-
dc.date.available	2022-05-16T09:49:21Z	-
dc.date.issued	2012-12-31	-
dc.identifier.citation	M. H. Bhuyan and Q. D. M. Khosru, “A Semi-Analytical Subthreshold Drain Current Deflection Model for the Asymmetric Pocket Implanted Nano Scale n-MOSFET,” Journal of Electrical Engineering, the Institution of Engineers Bangladesh (IEB-EE), ISSN: p-0379-4318, vol. EE 38, no. II, Dec. 2012, pp. 9-15.	en_US
dc.identifier.issn	p-0379-4318	-
dc.identifier.uri	http://dspace.aiub.edu:8080/jspui/handle/123456789/555	-
dc.description	This is joint research work.	en_US
dc.description.abstract	This paper introduces the effect of the magnetic field on the subthreshold drain current of pocket implanted n-MOSFET. The pocket implanted n-MOSFET’s surface potential, threshold voltage, electron mobility, and subthreshold drain current models are used to study the effect of the magnetic field on the drain current deflection in the inversion channel. Magnetic field strength is varied from ±200 mT to ±250 mT. Results verify the theoretical derivations This model can be used if short channel n-MOSFETs are used to develop the Magnetic FET Sensor (MFS). This type of sensor has many practical applications.	en_US
dc.description.sponsorship	Self-funded	en_US
dc.language.iso	en_US	en_US
dc.publisher	The Institution of Engineers Bangladesh (IEB-EE)	en_US
dc.relation.ispartofseries	;2	-
dc.subject	Pocket implanted n-MOSFET	en_US
dc.subject	Drain Current Deflection	en_US
dc.subject	Magnetic FET Sensor	en_US
dc.subject	Magnetic Field	en_US
dc.title	A Semi-Analytical Subthreshold Drain Current Deflection Model for the Asymmetric Pocket Implanted Nano Scale n-MOSFET	en_US
dc.type	Article	en_US
Appears in Collections:	Publications From Faculty of Engineering

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