MOS device simulation using MEDICI

Bhuyan, Muhibul Haque; Khan, Sher Shermin Azmiri

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DC Field	Value	Language
dc.contributor.author	Bhuyan, Muhibul Haque	-
dc.contributor.author	Khan, Sher Shermin Azmiri	-
dc.date.accessioned	2022-08-21T10:14:04Z	-
dc.date.available	2022-08-21T10:14:04Z	-
dc.date.issued	2005-12-31	-
dc.identifier.citation	M. H. Bhuyan and S. S. A. Khan, “MOS device simulation using MEDICI,” Journal of Bangladesh Electronics Society, ISSN: p-1816-1510, vol. 5, no. 2, pp. 67-73, December 2005.	en_US
dc.identifier.issn	p-1816-1510	-
dc.identifier.uri	http://dspace.aiub.edu:8080/jspui/handle/123456789/684	-
dc.description	This is a joint research work.	en_US
dc.description.abstract	MEDICI is a powerful device simulation program that can be used to simulate the behavior of MOS and other semiconductor devices. The program can be used to predict electrical characteristics for arbitrary bias conditions. In this paper, various characteristics of the conventional bulk MOS device have been simulated using the MEDlCl. Gate and drain characteristics, mobility and carrier concentration profiles, and effects of various device parameters on the threshold voltage of MOSFET are simulated. Finally, a CMOS is constructed and simulated to verify the MOS structure. Also, simulation results of threshold voltages are compared with the calculated results using the conventional bulk MOSFET equation.	en_US
dc.description.sponsorship	Self-funded.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Bangladesh Electronics and Informatics Society	en_US
dc.relation.ispartofseries	;10	-
dc.subject	MEDICI	en_US
dc.subject	MOSFET	en_US
dc.subject	Simulation	en_US
dc.subject	MOS Device	en_US
dc.subject	Characteristics	en_US
dc.subject	Threshold Voltage	en_US
dc.title	MOS device simulation using MEDICI	en_US
dc.type	Article	en_US
Appears in Collections:	Publications From Faculty of Engineering

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