Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/685
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBhuyan, Muhibul Haque-
dc.date.accessioned2022-08-21T10:14:36Z-
dc.date.available2022-08-21T10:14:36Z-
dc.date.issued2014-12-31-
dc.identifier.citationM. H. Bhuyan, “On the Single Electron Transistor,” Journal of Bangladesh Electronics Society, ISSN: p-1816-1510, vol. 14, no 1-2, June-December 2014, pp. 43-52(ii).en_US
dc.identifier.issnp-1816-1510-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/685-
dc.descriptionThis is a review work.en_US
dc.description.abstractDue to the fundamental size limitations of the transistor, single electron transistor (SET) has been playing an important role in nano technology and attracting researchers’ interests. It has been demonstrated that, whereas a conventional transistor turns on only once as electrons are added to it, submicron size transistors, isolated from their leads by tunnel junctions, turn on and off again every time an electron is added. This unusual behavior is primarily the result of the quantization of charge and the Coulomb interaction between electrons on the small transistor. In this review paper, history, basic theories, and a few applications of single electron transistors are discussed to generate interest of young researchers in SET.en_US
dc.description.sponsorshipSelf-fundeden_US
dc.language.isoen_USen_US
dc.publisherBangladesh Electronics and Informatics Societyen_US
dc.relation.ispartofseries;7-
dc.subjectSingle Electron Transistoren_US
dc.subjectSETen_US
dc.subjectNano Technologyen_US
dc.subjectTunnelingen_US
dc.subjectJunctionen_US
dc.subjectCoulomb Blockadeen_US
dc.titleOn the Single Electron Transistoren_US
dc.typeArticleen_US
Appears in Collections:Publications From Faculty of Engineering

Files in This Item:
File Description SizeFormat 
Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul BEISJ SET.docx2.93 MBMicrosoft Word XMLView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.