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http://dspace.aiub.edu:8080/jspui/handle/123456789/706| Title: | To Improve HiSIM-SOI for Real Application |
| Authors: | Bhuyan, Muhibul Haque Mattausch, Mitiko Miura- |
| Keywords: | HiSIM-SOI SOI-MOSFET |
| Issue Date: | 31-Mar-2004 |
| Publisher: | Hiroshima University |
| Citation: | M. H. Bhuyan and M. M.-Mattausch (Professor, Graduate School of Advanced Sciences of Matter), “To Improve HiSIM-SOI for Real Application,” Hiroshima University Annual Research Report, pp. 100-101, March 2004. URL: www.rcns.hiroshima-u.ac.jp/21coe/pdf/2004.../102_104_muhibul.pdf |
| Abstract: | SOI-MOSFET is a candidate for next generation integrated circuit technology due to its reduced junction capacitances and improved subthreshold swing. However, to utilize the technology for circuit application, a robust circuit model is needed. A complete surface-potential based fully depleted SOI-MOSFET model for circuit simulation has been developed by our group and is named HiSIM-SOI [1, 2]. This model considers device features explicitly as well as preserves the charge conservation. To improve HiSIM-SOI for real application is the purpose of this present work. |
| URI: | http://dspace.aiub.edu:8080/jspui/handle/123456789/706 |
| Appears in Collections: | Publications From Faculty of Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul HiSIM_SOI.docx | 3.33 MB | Microsoft Word XML | View/Open |
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