Temperature Effects on Subthreshold Drain Current of Nano Scale Pocket Implanted n-MOSFET

Bhuyan, Muhibul Haque; Ferdous, Fouzia; Khosru, Quazi Deen Mohd

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DC Field	Value	Language
dc.contributor.author	Bhuyan, Muhibul Haque	-
dc.contributor.author	Ferdous, Fouzia	-
dc.contributor.author	Khosru, Quazi Deen Mohd	-
dc.date.accessioned	2022-08-22T05:05:09Z	-
dc.date.available	2022-08-22T05:05:09Z	-
dc.date.issued	2013-03-07	-
dc.identifier.citation	M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, “Temperature Effects on Subthreshold Drain Current of Nano Scale Pocket Implanted n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 599-602.	en_US
dc.identifier.uri	http://dspace.aiub.edu:8080/jspui/handle/123456789/722	-
dc.description.abstract	Temperature fluctuations affect threshold voltage, carrier mobility and transit time of an n-MOSFET. This phenomenon induces the variations of drain current in the device. This paper presents an analytical model of the temperature effects of subthreshold drain current of pocket implanted n-MOSFET. The model has also been used to study the device behavior at low and high ambient temperatures. The model includes the effects of temperature on the threshold voltage, the carrier mobility and hence on the subthreshold drain current for nano scale pocket implanted n-MOSFET.	en_US
dc.description.sponsorship	Self	en_US
dc.language.iso	en_US	en_US
dc.subject	Pocket implanted MOS device	en_US
dc.subject	nano scaled n-MOSFET	en_US
dc.subject	Temperature Effects	en_US
dc.subject	Drain Current	en_US
dc.subject	Threshold voltage	en_US
dc.subject	Simulation	en_US
dc.title	Temperature Effects on Subthreshold Drain Current of Nano Scale Pocket Implanted n-MOSFET	en_US
dc.type	Article	en_US
Appears in Collections:	Publications From Faculty of Engineering

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