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dc.contributor.authorBhuyan, Muhibul Haque-
dc.contributor.authorMattausch, Mitiko Miura--
dc.date.accessioned2022-08-22T05:07:09Z-
dc.date.available2022-08-22T05:07:09Z-
dc.date.issued2004-03-31-
dc.identifier.citationM. H. Bhuyan and M. M.-Mattausch, “To Improve HiSIM-SOI for Real Application,” Hiroshima University Annual Research Report, pp. 100-101, March 2004. URL: www.rcns.hiroshima-u.ac.jp/21coe/pdf/2004.../102_104_muhibul.pdfen_US
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/728-
dc.descriptionThis work was done when I was working there as a CoE Researcher.en_US
dc.description.abstractSOI-MOSFET is a candidate for next generation integrated circuit technology due to its reduced junction capacitances and improved subthreshold swing. However, to utilize the technology for circuit application, a robust circuit model is needed. A complete surface-potential-based fully depleted SOI-MOSFET model for circuit simulation has been developed by our group and is named HiSIM-SOI [1, 2]. This model considers device features explicitly as well as preserves the charge conservation. To improve HiSIM-SOI for real application is the purpose of this present work.en_US
dc.description.sponsorshipCoE-HU, JPen_US
dc.language.isoen_USen_US
dc.publisherHiroshima Universityen_US
dc.relation.ispartofseries;5-
dc.subjectHiSIM-SOIen_US
dc.subjectSOI-MOSFETen_US
dc.titleTo Improve HiSIM-SOI for Real Applicationen_US
dc.typeArticleen_US
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