Investigation of short channel effects in MOSFET using the device simulator, MEDICI

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DC Field	Value	Language
dc.contributor.author	Bhuyan, Muhibul Haque	-
dc.contributor.author	Khan, Sher Shermin Azmiri	-
dc.date.accessioned	2022-08-25T04:47:01Z	-
dc.date.available	2022-08-25T04:47:01Z	-
dc.date.issued	2005-11-24	-
dc.identifier.citation	M. H. Bhuyan and S. S. A. Khan, “Investigation of short channel effects in MOSFET using the device simulator, MEDICI,” Proceedings of the Multimedia University International Symposium on Information and Communications Technologies, Petaling Jaya, Malaysia, Nov. 24-25, 2005, TS16 9-12	en_US
dc.identifier.uri	http://dspace.aiub.edu:8080/jspui/handle/123456789/745	-
dc.description.abstract	Short channel effect is investigated using MEDICI. For long and short channel MOSFETs, threshold voltages are calculated using equations obtained from the literature. Calculated and simulation results show that one-dimensional device equation needs to be modified to include the short channel effects	en_US
dc.description.sponsorship	HU, JP	en_US
dc.language.iso	en_US	en_US
dc.publisher	Multimedia University, Malaysia	en_US
dc.subject	MOS device	en_US
dc.subject	MEDICI	en_US
dc.subject	SCE	en_US
dc.subject	Threshold Voltage	en_US
dc.subject	Device Simulation	en_US
dc.subject	One-dimensional Device Equations	en_US
dc.title	Investigation of short channel effects in MOSFET using the device simulator, MEDICI	en_US
dc.type	Article	en_US
Appears in Collections:	Publications From Faculty of Engineering

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