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Title: | Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor |
Authors: | Islam, Md Rabiul Hasan, Md Kamrul Mannan, Mohmammad Abdul Ali, M Tanseer |
Keywords: | GaN DG-MOSFET DIBL SS Silvaco Atlas SCE Gate Length |
Issue Date: | Aug-2019 |
Publisher: | American International University-Bangladesh (AIUB) |
Citation: | Md Rabiul Islam, Md Kamrul Hasan, Mohammad Abdul Mannan, M Tanseer Ali, Md Rokib Hasan, “Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor,” AIUB Journal of Science and Engineering (AJSE), Vol. 18, Issue 2, pp. 73-80, August 2019. |
Abstract: | We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-based DG MOSFETs shows better performance than Si-based Single gate MOSFETs. The proposed device has drawn the attention over conventional SG-MOSFET due to fas switching performance. The device turn on and turn off voltage is respectively VGS=1V(On state) and VGS-0V(OFF State). To validate our simulation tool and model results, previous research model has been investigated using Silvaco Atlas and the results obtained are compared to the previous results. |
URI: | http://dspace.aiub.edu:8080/jspui/handle/123456789/2008 |
ISSN: | 1608 – 3679 |
Appears in Collections: | Publications From Faculty of Engineering |
Files in This Item:
File | Description | Size | Format | |
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69J_Mannan_AJSE.pdf | 184.97 kB | Adobe PDF | View/Open |
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