Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2008
Title: Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Authors: Islam, Md Rabiul
Hasan, Md Kamrul
Mannan, Mohmammad Abdul
Ali, M Tanseer
Keywords: GaN
DG-MOSFET
DIBL
SS
Silvaco Atlas
SCE
Gate Length
Issue Date: Aug-2019
Publisher: American International University-Bangladesh (AIUB)
Citation: Md Rabiul Islam, Md Kamrul Hasan, Mohammad Abdul Mannan, M Tanseer Ali, Md Rokib Hasan, “Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor,” AIUB Journal of Science and Engineering (AJSE), Vol. 18, Issue 2, pp. 73-80, August 2019.
Abstract: We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-based DG MOSFETs shows better performance than Si-based Single gate MOSFETs. The proposed device has drawn the attention over conventional SG-MOSFET due to fas switching performance. The device turn on and turn off voltage is respectively VGS=1V(On state) and VGS-0V(OFF State). To validate our simulation tool and model results, previous research model has been investigated using Silvaco Atlas and the results obtained are compared to the previous results.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/2008
ISSN: 1608 – 3679
Appears in Collections:Publications From Faculty of Engineering

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