Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2533
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dc.contributor.authorMohamad, Ili Salwani-
dc.contributor.authorKer, Pin Jern-
dc.contributor.authorChelvanathan, Puvaneswaran-
dc.contributor.authorNorizan, Mohd Natashah-
dc.contributor.authorYap, Boon Kar-
dc.contributor.authorTiong, Sieh Kiong-
dc.contributor.authorAmin, Nowshad-
dc.date.accessioned2024-11-11T07:14:12Z-
dc.date.available2024-11-11T07:14:12Z-
dc.date.issued2024-06-
dc.identifier.issn2405-8440-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/2533-
dc.description.abstractThe pursuit of enhancing the performance of silicon-based solar cells is pivotal for the progression of solar photovoltaics as the most potential renewable energy technologies. Despite the existence of sophisticated methods like diffusion and ion implantation for doping phosphorus into p-type silicon wafers in the semiconductor industry, there is a compelling need to research spin-on doping techniques, especially in the context of tandem devices, where fabricating the bottom cell demands meticulous control over conditions. The primary challenge with existing silicon cell fabrication methods lies in their complexity, cost, and environmental concerns. Thus, this research focuses on the optimization of parameters, such as, deposition of the spin on doping layer, emitter thickness (Xj), and dopant concentration (ND) to maximize solar cell efficiency. We utilized both fabrication and simulation techniques to delve into these factors. Employing silicon wafer thickness of 625 μm, the study explored the effects of altering the count of dopant layers through the spin-on dopant (SOD) technique in the device fabrication. Interestingly, the increase of the dopant layers from 1 to 4 enhances efficiency, whereby, further addition of 6 and 8 layers worsens both series and shunt resistances, affecting the solar cell performance. The peak efficiency of 11.75 % achieved in fabrication of 4 layers dopant. By using device simulation with wxAMPS to perform a combinatorial analysis of Xj and ND, we further identified the optimal conditions for an emitter to achieve peak performance. Altering Xj between 0.05 μm and 10 μm and adjusting ND from 1e+15 cm−3 to 9e+15 cm−3, we found that maximum efficiency of 14.18 % was attained for Xj = 1 μm and ND = 9e+15 cm−3. This research addresses a crucial knowledge gap, providing insights for creating more efficient, cost-effective, and flexible silicon solar cells, thereby enhancing their viability as a sustainable energy source.en_US
dc.description.sponsorshipMinistry of Higher Education of Malaysia (MOHE) for their invaluable support provided via the HICoE grant, under project code JPT.S(BPKI)2000/016/018/015 JId.4 (21) (2022003HICOE). This project also received support from the Dato’ Low Tuck Kwong International Energy Transition Grant, identified by the project code 202203005ETG.en_US
dc.language.isoenen_US
dc.publisherCellen_US
dc.relation.ispartofseries10;-
dc.subjectEnergyen_US
dc.subjectSolar cellen_US
dc.subjectSiliconen_US
dc.subjectHomojunctionen_US
dc.subjectEmitter thicknessen_US
dc.subjectSpin on dopingen_US
dc.subjectSeries resistanceen_US
dc.subjectShunt resistanceen_US
dc.subjectEfficiencyen_US
dc.titleAn experimental investigation of spin-on doping optimization for enhanced electrical characteristics in silicon homojunction solar cells: Proof of concepten_US
dc.typeArticleen_US
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