Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2552
Title: Synthesis and magneto-dielectric properties of Ti-doped Ni0.5Zn0.5TixFe2 xO4 ferrite via a conventional sol–gel process
Authors: Hossain, Md. Sarowar
Alama, M. Farzana
Rahman, M. Atikur
Khan, M. N. I.
Rashid, R.
Islam, M. Saiful
Ghann, William
Alam, M. K.
Uddin, Jamal
Keywords: Spinel ferrite
Sol-gel method
Magnetic properties
Dielectric constants
Matching impedance
Issue Date: 30-Oct-2024
Publisher: Royal Society of Chemistry (RSC)
Citation: M. Farzana Alam, M. Atikur Rahman, Md. Sarowar Hossain, M. N. I. Khan, R. Rashid, M. Saiful Islam, William Ghann, M.K. Alam, and Jamal Uddin, Synthesis and magneto-dielectric properties of Ti-doped Ni0.5Zn0.5TixFe2−xO4 ferrite via a conventional sol–gel process, Mater. Adv. 2024. DOI: 10.1039/d4ma00529e
Abstract: Ni–Zn-based ferrites (NZFO) need to possess the ideal ratio of dielectric and magnetic characteristics for uses involving electromagnetic fields. Consequently, the NZFO system has been modified by Ti4+ substitution at Fe3+ producing Ni0.5Zn0.5TixFe2−xO4 (x = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) and a conventional sol–gel process was followed for the synthesis. The structure of the synthesized samples was evaluated from the X-ray diffraction (XRD) patterns. Fourier transform infrared (FTIR) measurement provided information on chemical interaction with thermodynamic conditions. In addition, the grain sizes were obtained from scanning electron microscopy (SEM). Furthermore, the studied samples exhibit a notable light absorption in the visible spectrum with band gaps between 3.8 and 4.8 eV. The magneto-dielectric properties were analyzed by field (H) dependent magnetization (M), frequency-dependent permeability (μ), and permittivity (ε) measurements. Ti4+ substitution in NZFO led to a decrease in magnetic saturation (Ms) and μ while the values of creased and improved the mismatching impedance (Z/η0 = (μ′/ε′)1/2). The lowest value of Ms (14 emu g−1) is achieved for the sample with x = 0.1 for which μ is also the lowest. Finally, a stable value of Z/η0 (∼4.0) has been obtained for the x = 0.10 sample over a wide range of frequencies (1–10 MHz), making it suitable as a miniaturizing device material in this frequency range.
Description: A peer-reviewed and open-access article. Received 23rd May 2024, Accepted 9th October 2024
URI: http://dx.doi.org/10.1039/D4MA00529E
http://dspace.aiub.edu:8080/jspui/handle/123456789/2552
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