Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/526
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dc.contributor.authorBhuyan, Muhibul Haque-
dc.date.accessioned2022-05-16T09:18:33Z-
dc.date.available2022-05-16T09:18:33Z-
dc.date.issued2021-04-30-
dc.identifier.citationM. H. Bhuyan, “Impact of Gate Insulation Material and Thickness on Pocket Implanted MOS Device,” International Journal of Electronics and Communication Engineering, vol. 15, no. 4, April 2021, World Academy of Science, Engineering and Technology, pp. 128-136.en_US
dc.identifier.issne-1307-6892-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/526-
dc.descriptionThis is based on a student research paper.en_US
dc.description.abstractIf a person can monitor his/her oxygen saturation level intermittently then he/she can identify his/her condition early and thus he/she can seek a doctor’s help. This paper reports the design, simulation, and implementation of a low-cost pulse oxygen saturation measurement device based on a reflective photoplethysmography (PPG) system using an integrated circuit sensor as the fundamental component of this health status checking device. The measurement of the physiological parameter is the blood oxygen saturation level (SpO2) in the peripheral capillary. This work has been implemented using an Arduino Uno R3 microcontroller along with this sensor integrated circuit (IC). The system is designed in the Proteus environment and then simulated to check its performance. After that, the hardware implementation is performed. We used a clipping type optical sensor to sense the arterial oxygen saturation level of blood signal from the fingertips of an individual and then transformed it into the digital data in the microcontroller through its programming its instruction. The designed system was tested by measuring the SpO2 level for several people of different ages, from 12 to 57 years of age. Besides, the same people were tested using a standard machine purchased from the market. Test results were found very satisfactory as the average percentage of error was very low, 1.59% only.en_US
dc.description.sponsorshipSelf-fundeden_US
dc.language.isoen_USen_US
dc.publisherWASETen_US
dc.relation.ispartofseries;1-
dc.subjectLinear symmetric pocket profileen_US
dc.subjectPocket implanted n-MOS Deviceen_US
dc.subjectLinear asymmetric pocket profileen_US
dc.subjectMeasurement devices, invasiveen_US
dc.subjectGate materialen_US
dc.subjectMATLABen_US
dc.titleImpact of Gate Insulation Material and Thickness on Pocket Implanted MOS Deviceen_US
dc.title.alternative1en_US
dc.typeArticleen_US
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