Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/679
Title: Carrier Conduction Time Delay Model in Subthreshold Regime of Pocket Implanted Nano Scale n-MOSFET
Authors: Bhuyan, Muhibul Haque
Ferdous, Fouzia
Khosru, Quazi Deen Mohd
Keywords: n-MOSFET
Carrier conduction time delay
Subthreshold drain current
Modeling and Simulation
Nano-scaled n-MOSFET
Analytical Model
Symmetric Pocket Profiles
MATLAB
Issue Date: 31-Dec-2012
Publisher: Bangladesh Electronics and Informatics Society
Citation: M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, “Carrier Conduction Time Delay Model of the Pocket Implanted Nano Scale n-MOSFET,” Journal of Bangladesh Electronics Society, ISSN: p-1816-1510, vol. 12, no 1-2, June-December 2012, pp. 67-74.
Series/Report no.: ;10
Abstract: In this paper, an analytical carrier conduction time delay model in the subthreshold regime of the symmetric pocket implanted nano-scaled n-MOSFET has been presented. The model is developed using the inversion layer charge and subthreshold drain current model for pocket implanted n-MOSFET. The model incorporates the linear pocket profiles symmetric both at the source and drain sides. The linear profiles are then converted into the effective doping concentration by mathematical integration along the channel. Electron current density per unit area is obtained from the conventional drift-diffusion equation in the subthreshold regime. Then inversion channel charge density per unit area is calculated for the pocket doped channel. Thus, the conduction time delay is found in the subthreshold regime. The simulation is carried out for different pocket profiles and device parameters as well as for various bias voltages. The results show that the derived model can produce the conduction delay time in the subthreshold regime that can be utilized to study and characterize the pocket implanted advanced ULSI devices.
Description: This is joint research work.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/679
ISSN: p-1816-1510
Appears in Collections:Publications From Faculty of Engineering

Files in This Item:
File Description SizeFormat 
Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul BEISJ t_cond.docx2.93 MBMicrosoft Word XMLView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.