Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/689
Title: A Semi-Analytical Drain Current Deflection Model for the Symmetric Pocket Implanted n-MOSFET Using Lorentz Force Analysis
Authors: Bhuyan, Muhibul Haque
Ferdous, Fouzia
Khosru, Quazi Deen Mohd
Keywords: n-MOSFET
Pocket Implanted MOS Device
Drain Current Deflection
FET Sensor
Subthreshold Drain Current
Magnetic Field
Issue Date: 28-Feb-2013
Publisher: IJECEE
Citation: M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, “A Semi-Analytical Drain Current Deflection Model for the Symmetric Pocket Implanted n-MOSFET Using Lorentz Force Analysis,” International Journal of Electronics, Communications, and Electrical Engineering (IJECE), ISSN: 2277-7040, vol. 3, issue 2, February 2013, pp. 35-47.
Series/Report no.: ;3
Abstract: This paper introduces the effect of the magnetic field upon the deflection of the subthreshold drain current of the symmetric pocket implanted n-MOSFET. The symmetric pocket implanted n-MOSFET’s surface potential, threshold voltage, electron mobility, and subthreshold drain current models are used to study the effect of magnetic field on the subthreshold drain current deflection in the inversion channel. Magnetic field strength is varied from ±200 mT to ±250 mT. Results verify the theoretical derivations. This model can be used if short channel n-MOSFETs are used to develop the Magnetic FET Sensors (MFS) that have many practical applications.
Description: This is an extension of my PhD work.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/689
ISSN: 2277-7040
Appears in Collections:Publications From Faculty of Engineering

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