Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/693
Title: Linear Profile Based Analytical Surface Potential Model for Pocket Implanted Sub-100 nm n-MOSFET
Authors: Bhuyan, Muhibul Haque
Khosru, Quazi Deen Mohd
Keywords: n-MOSFET
Linear Pocket Profile
Pocket Implant
Surface Potential
SCE
RSCE
Threshold Voltage
Surface Charge
Issue Date: 30-Apr-2010
Publisher: Journal of Electron Devices
Citation: M. H. Bhuyan and Q. D. M. Khosru, “Linear Profile Based Analytical Surface Potential Model for Pocket Implanted Sub-100 nm n-MOSFET,” Journal of Electron Devices, France, ISSN: 1682-3427, vol. 7, April 2010, pp 235-240.
Series/Report no.: ;5
Abstract: This paper presents an analytical surface potential model for pocket implanted sub-100 nm n-MOSFET. The model is derived by solving Poisson's equation in the depletion region at the surface with the appropriate boundary conditions at the source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model also incorporates the drain and substrate bias effect below and above threshold conditions. The simulation results show that the derived surface potential model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.
Description: This is based on my PhD research.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/693
ISSN: 1682-3427
Appears in Collections:Publications From Faculty of Engineering

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