Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/721
Title: Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET
Authors: Ferdous, Fouzia
Bhuyan, Muhibul Haque
Khosru, Quazi Deen Mohd
Keywords: Pocket implanted MOS device
nano scaled n-MOSFET
Carrier diffusion time delay
Linear Pocket Profile
MOSFET model
Simulation
Issue Date: 7-Mar-2013
Publisher: IEEE
Citation: F. Ferdous, M. H. Bhuyan, and Q. D. M. Khosru, “Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 603-606.
Abstract: This paper presents an analytical model for the calculations of carrier diffusion time delay in pocket implanted nano scale n-MOSFET. The model is developed using the mobility model of the pocket implanted n-MOSFET developed previously. The developed model utilizes the linear pocket profile to derive the effective electric field that affects the mobility in the channel. The model has been studied using simulations for the various device and pocket profile parameters. The model will be useful to study the behaviour of the nano scaled pocket implanted n-MOSFET for high frequency operation.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/721
Appears in Collections:Publications From Faculty of Engineering

Files in This Item:
File Description SizeFormat 
Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul IEEE ICECE tauD.docx3.33 MBMicrosoft Word XMLView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.