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http://dspace.aiub.edu:8080/jspui/handle/123456789/721
Title: | Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET |
Authors: | Ferdous, Fouzia Bhuyan, Muhibul Haque Khosru, Quazi Deen Mohd |
Keywords: | Pocket implanted MOS device nano scaled n-MOSFET Carrier diffusion time delay Linear Pocket Profile MOSFET model Simulation |
Issue Date: | 7-Mar-2013 |
Publisher: | IEEE |
Citation: | F. Ferdous, M. H. Bhuyan, and Q. D. M. Khosru, “Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 603-606. |
Abstract: | This paper presents an analytical model for the calculations of carrier diffusion time delay in pocket implanted nano scale n-MOSFET. The model is developed using the mobility model of the pocket implanted n-MOSFET developed previously. The developed model utilizes the linear pocket profile to derive the effective electric field that affects the mobility in the channel. The model has been studied using simulations for the various device and pocket profile parameters. The model will be useful to study the behaviour of the nano scaled pocket implanted n-MOSFET for high frequency operation. |
URI: | http://dspace.aiub.edu:8080/jspui/handle/123456789/721 |
Appears in Collections: | Publications From Faculty of Engineering |
Files in This Item:
File | Description | Size | Format | |
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Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul IEEE ICECE tauD.docx | 3.33 MB | Microsoft Word XML | View/Open |
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