Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/793
Title: Effects of Pocket Profile Parameters on Carrier Conduction Time Delay in Pocket Implanted Nano Scale n-MOSFET
Authors: Bhuyan, Muhibul Haque
Ferdous, Fouzia
Khosru, Quazi Deen Mohd
Keywords: Pocket implanted MOS device
Conduction Time Delay
Pocket Profile Parameter
Linear Pocket Profile
Peak pocket concentration
Pocket length
MATLAB
Simulation
Current Density
RSCE
Issue Date: 2-Oct-2012
Publisher: Bangladesh Electronics and Informatics Society
Citation: M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, “Effects of Pocket Profile Parameters on Carrier Conduction Time Delay in Pocket Implanted Nano Scale n-MOSFET,” Proceedings of the National Conference on Electronics and ICT for National Development organized by the Bangladesh Electronics Society, Dhaka, Bangladesh, 3-4 October 2012, pp. 253-258.
Abstract: In this paper, an analytical carrier conduction time delay model has been presented using the inversion layer charge and subthreshold drain current model for pocket implanted n-MOSFET. The model is developed by using the linear pocket profiles at the source and drain edges. The model includes the effective doping concentration of the two linear pocket profiles. Electron current density is obtained from the conventional drift-diffusion equation in the subthreshold regime. Then inversion channel charges per unit area are calculated for the pocket doped channel. The simulation is carried out for different pocket profile parameters and the results show that the derived model can produce the conduction delay time properly. This can be utilized to study and characterize the pocket implanted advanced ULSI devices.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/793
Appears in Collections:Publications From Faculty of Engineering

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