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Title: | Effects of Pocket Profile Parameters on Carrier Conduction Time Delay in Pocket Implanted Nano Scale n-MOSFET |
Authors: | Bhuyan, Muhibul Haque Ferdous, Fouzia Khosru, Quazi Deen Mohd |
Keywords: | Pocket implanted MOS device Conduction Time Delay Pocket Profile Parameter Linear Pocket Profile Peak pocket concentration Pocket length MATLAB Simulation Current Density RSCE |
Issue Date: | 2-Oct-2012 |
Publisher: | Bangladesh Electronics and Informatics Society |
Citation: | M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, “Effects of Pocket Profile Parameters on Carrier Conduction Time Delay in Pocket Implanted Nano Scale n-MOSFET,” Proceedings of the National Conference on Electronics and ICT for National Development organized by the Bangladesh Electronics Society, Dhaka, Bangladesh, 3-4 October 2012, pp. 253-258. |
Abstract: | In this paper, an analytical carrier conduction time delay model has been presented using the inversion layer charge and subthreshold drain current model for pocket implanted n-MOSFET. The model is developed by using the linear pocket profiles at the source and drain edges. The model includes the effective doping concentration of the two linear pocket profiles. Electron current density is obtained from the conventional drift-diffusion equation in the subthreshold regime. Then inversion channel charges per unit area are calculated for the pocket doped channel. The simulation is carried out for different pocket profile parameters and the results show that the derived model can produce the conduction delay time properly. This can be utilized to study and characterize the pocket implanted advanced ULSI devices. |
URI: | http://dspace.aiub.edu:8080/jspui/handle/123456789/793 |
Appears in Collections: | Publications From Faculty of Engineering |
Files in This Item:
File | Description | Size | Format | |
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Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul BEIS Tau_Cond.docx | 3.34 MB | Microsoft Word XML | View/Open |
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