Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/539
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dc.contributor.authorBhuyan, Muhibul Haque-
dc.contributor.authorShams, Md. Riad Ferdous-
dc.date.accessioned2022-05-16T09:31:09Z-
dc.date.available2022-05-16T09:31:09Z-
dc.date.issued2019-12-31-
dc.identifier.citationM. H. Bhuyan and M. R. F. Shams, “Design and Simulation of a 4:1 Multiplexer in Microwind and DSch using 90 nm CMOS Technology,” Southeast University Journal of Science and Engineering (SEUJSE), p-ISSN: 1999-1630, vol. 13, no. 2, December 2019, pp. 1-8.en_US
dc.identifier.issnp-1999-1630-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/539-
dc.descriptionThis is based on student research work.en_US
dc.description.abstractNow a day, low power and low energy have become an important issue in consumer electronics and it is necessary to do research in combinational circuits. One of the important elements in digital circuits is a multiplexer or data selector for processing multiple inputs with a single output. At present, multiplexers have become a universal logic circuit used to design other combinational logic circuits or digital systems. Therefore, now attention is being given to design or revise the design of a multiplexer topology so that the power consumption and area occupancy become low and at the same time speed becomes high. In this paper, Complementary Metal Oxide Semiconductor (CMOS) logic-based 4:1 multiplexer has been designed, simulated and analyzed in terms of its performance at the transistor level using CAD tools of DSch and Microwind.en_US
dc.description.sponsorshipSelf-fundeden_US
dc.language.isoen_USen_US
dc.publisherSoutheast Universityen_US
dc.relation.ispartofseries;1-
dc.subjectMultiplexeren_US
dc.subjectCMOSen_US
dc.subjectMOS Transistoren_US
dc.subjectVLSIen_US
dc.subjectMicrowinden_US
dc.subjectDSchen_US
dc.titleDesign and Simulation of a 4:1 Multiplexer in Microwind and DSch using 90 nm CMOS Technologyen_US
dc.typeArticleen_US
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