A Semi-Analytical Subthreshold Drain Current Deflection Model for the Asymmetric Pocket Implanted Nano Scale n-MOSFET

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Title:	A Semi-Analytical Subthreshold Drain Current Deflection Model for the Asymmetric Pocket Implanted Nano Scale n-MOSFET
Authors:	Bhuyan, Muhibul Haque Khosru, Quazi Deen Mohd
Keywords:	Pocket implanted n-MOSFET Drain Current Deflection Magnetic FET Sensor Magnetic Field
Issue Date:	31-Dec-2012
Publisher:	The Institution of Engineers Bangladesh (IEB-EE)
Citation:	M. H. Bhuyan and Q. D. M. Khosru, “A Semi-Analytical Subthreshold Drain Current Deflection Model for the Asymmetric Pocket Implanted Nano Scale n-MOSFET,” Journal of Electrical Engineering, the Institution of Engineers Bangladesh (IEB-EE), ISSN: p-0379-4318, vol. EE 38, no. II, Dec. 2012, pp. 9-15.
Series/Report no.:	;2
Abstract:	This paper introduces the effect of the magnetic field on the subthreshold drain current of pocket implanted n-MOSFET. The pocket implanted n-MOSFET’s surface potential, threshold voltage, electron mobility, and subthreshold drain current models are used to study the effect of the magnetic field on the drain current deflection in the inversion channel. Magnetic field strength is varied from ±200 mT to ±250 mT. Results verify the theoretical derivations This model can be used if short channel n-MOSFETs are used to develop the Magnetic FET Sensor (MFS). This type of sensor has many practical applications.
Description:	This is joint research work.
URI:	http://dspace.aiub.edu:8080/jspui/handle/123456789/555
ISSN:	p-0379-4318
Appears in Collections:	Publications From Faculty of Engineering

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