Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/685
Title: On the Single Electron Transistor
Authors: Bhuyan, Muhibul Haque
Keywords: Single Electron Transistor
SET
Nano Technology
Tunneling
Junction
Coulomb Blockade
Issue Date: 31-Dec-2014
Publisher: Bangladesh Electronics and Informatics Society
Citation: M. H. Bhuyan, “On the Single Electron Transistor,” Journal of Bangladesh Electronics Society, ISSN: p-1816-1510, vol. 14, no 1-2, June-December 2014, pp. 43-52(ii).
Series/Report no.: ;7
Abstract: Due to the fundamental size limitations of the transistor, single electron transistor (SET) has been playing an important role in nano technology and attracting researchers’ interests. It has been demonstrated that, whereas a conventional transistor turns on only once as electrons are added to it, submicron size transistors, isolated from their leads by tunnel junctions, turn on and off again every time an electron is added. This unusual behavior is primarily the result of the quantization of charge and the Coulomb interaction between electrons on the small transistor. In this review paper, history, basic theories, and a few applications of single electron transistors are discussed to generate interest of young researchers in SET.
Description: This is a review work.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/685
ISSN: p-1816-1510
Appears in Collections:Publications From Faculty of Engineering

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