An Analytical Surface Potential Model for Pocket Implanted Sub-100 nm n-MOSFET

Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/724

Title:	An Analytical Surface Potential Model for Pocket Implanted Sub-100 nm n-MOSFET
Authors:	Bhuyan, Muhibul Haque Khosru, Quazi Deen Mohd
Keywords:	Pocket implanted MOS device nano scaled n-MOSFET Surface potential Drain Voltage Drain Current Pocket length Pocket concentration Threshold voltage
Issue Date:	27-Jan-2009
Publisher:	IEEE
Citation:	M. H. Bhuyan and Q. D. M. Khosru, “An Analytical Surface Potential Model for Pocket Implanted Sub-100 nm n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering, Dhaka, 20-22 December 2008, pp 442-446.
Abstract:	This paper presents an analytical surface potential model for pocket implanted sub-100 nm n-MOSFET. The model is derived by solving Poisson's equation in the depletion region at the surface with the appropriate boundary conditions at the source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model also incorporates the drain and substrate bias effect below and above threshold conditions. The simulation results show that the derived surface potential model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.
URI:	http://dspace.aiub.edu:8080/jspui/handle/123456789/724
Appears in Collections:	Publications From Faculty of Engineering

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