Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/728
Title: To Improve HiSIM-SOI for Real Application
Authors: Bhuyan, Muhibul Haque
Mattausch, Mitiko Miura-
Keywords: HiSIM-SOI
SOI-MOSFET
Issue Date: 31-Mar-2004
Publisher: Hiroshima University
Citation: M. H. Bhuyan and M. M.-Mattausch, “To Improve HiSIM-SOI for Real Application,” Hiroshima University Annual Research Report, pp. 100-101, March 2004. URL: www.rcns.hiroshima-u.ac.jp/21coe/pdf/2004.../102_104_muhibul.pdf
Series/Report no.: ;5
Abstract: SOI-MOSFET is a candidate for next generation integrated circuit technology due to its reduced junction capacitances and improved subthreshold swing. However, to utilize the technology for circuit application, a robust circuit model is needed. A complete surface-potential-based fully depleted SOI-MOSFET model for circuit simulation has been developed by our group and is named HiSIM-SOI [1, 2]. This model considers device features explicitly as well as preserves the charge conservation. To improve HiSIM-SOI for real application is the purpose of this present work.
Description: This work was done when I was working there as a CoE Researcher.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/728
Appears in Collections:Publications From Faculty of Engineering

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