Investigation of short channel effects in MOSFET using the device simulator, MEDICI

Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/745

Title:	Investigation of short channel effects in MOSFET using the device simulator, MEDICI
Authors:	Bhuyan, Muhibul Haque Khan, Sher Shermin Azmiri
Keywords:	MOS device MEDICI SCE Threshold Voltage Device Simulation One-dimensional Device Equations
Issue Date:	24-Nov-2005
Publisher:	Multimedia University, Malaysia
Citation:	M. H. Bhuyan and S. S. A. Khan, “Investigation of short channel effects in MOSFET using the device simulator, MEDICI,” Proceedings of the Multimedia University International Symposium on Information and Communications Technologies, Petaling Jaya, Malaysia, Nov. 24-25, 2005, TS16 9-12
Abstract:	Short channel effect is investigated using MEDICI. For long and short channel MOSFETs, threshold voltages are calculated using equations obtained from the literature. Calculated and simulation results show that one-dimensional device equation needs to be modified to include the short channel effects
URI:	http://dspace.aiub.edu:8080/jspui/handle/123456789/745
Appears in Collections:	Publications From Faculty of Engineering

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