Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/908
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dc.contributor.authorKarima, Nazmun Nahar-
dc.contributor.authorBhuyan, Muhibul Haque-
dc.date.accessioned2023-07-19T06:47:03Z-
dc.date.available2023-07-19T06:47:03Z-
dc.date.issued2023-05-10-
dc.identifier.citationN. N. Karima and M. H. Bhuyan, “Design Process, Simulation, and Analysis of a Common Source MOS Amplifier Circuit in Cadence at 45 nm CMOS Technology Node,” IOSR Journal of VLSI and Signal Processing (IOSR-JVSP), IF=2.82, ISSN: e-2319-4200, p-2319-4197, vol. 13, issue 3, series-I, May - June 2023, pp. 19-25.en_US
dc.identifier.issne-ISSN: 2319-4200, p-ISSN: 2319-4197-
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/908-
dc.descriptionWe used Cadence software of VLSI Lab, AIUB.en_US
dc.description.abstractThis work describes a design process, simulation, and analysis of a CMOS-based common source amplifier circuit in the Cadence Virtuoso environment at the 45nm technology node. The suggested CMOS circuit may be useful in the op-amplifier or other circuits. The circuit is designed to work with a 1.8V DC power source. The circuit is constructed from two complementary NMOS and PMOS transistors having a 45 nm gate length. The gate widths are chosen as 1 and 2 \mu m, respectively. Transistors are selected from the gpdk045 library of the Cadence. For the simulation purpose, we have used two sources from the AnalogLib library- one is a DC bias source and the other is a pulse source for the input signals. After designing the circuit, the circuit was simulated to test and assess various performance factors, including gain, phase margin, gain bandwidth, power dissipation, etc. Simulation results confirm that the designed circuit works well at this node. This type of design and simulation experience can give confidence to fabrication engineers regarding its functionality and reliability.en_US
dc.description.sponsorshipSelf-funded.en_US
dc.language.isoen_USen_US
dc.publisherIOSR Journals, Indiaen_US
dc.relation.ispartofseries1;3-
dc.subjectCMOSen_US
dc.subjectCommon Source Amplifieren_US
dc.subjectGainen_US
dc.subjectBandwidthen_US
dc.subjectTechnology Nodeen_US
dc.subjectVLSIen_US
dc.subjectCircuit Designen_US
dc.subjectCadenceen_US
dc.subjectSimulationen_US
dc.subjectAnalysisen_US
dc.titleDesign Process, Simulation, and Analysis of a Common Source MOS Amplifier Circuit in Cadence at 45 nm CMOS Technology Nodeen_US
dc.typeArticleen_US
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