Sub-nano Regime DG-MOSFETs

Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2012

Title:	Sub-nano Regime DG-MOSFETs
Authors:	Hasan, Md. Rokib Islam, Md. Rabiul Hassan, Md. Kamrul Mannan, Mohammad Abdul
Keywords:	Transfer characteristics curve Double gate MOSFETs ION DIBL SS
Issue Date:	2018
Publisher:	STM Journals
Citation:	Md. Rokib Hasan, Md. Rabiul Islam, Md. Kamrul Hassan and Mohammad Abdul Mannan, “Sub-nano Regime DG-MOSFETs,” Journal of Semiconductor Devices and Circuits (STM Journals), Vol. 5, Issue 3, pp. 1-7, 2018.
Abstract:	The significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric Field (EF).
URI:	http://dspace.aiub.edu:8080/jspui/handle/123456789/2012
ISSN:	2455-3379
Appears in Collections:	Publications From Faculty of Engineering

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