Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/2535
Title: Elucidating the effects of Cr–S variations in Cr-doped CZTS for intermediate band solar cell applications
Authors: Mohd Izhar Sapeli, Megat
Chelvanathan, Puvaneswaran
Yusoff, Yulisa
Rahman, Kazi Sajedur
Rafiq, Md Khan Sobayel
Shahahmadi, Seyed Ahmad
Nowshad, Amin
Keywords: Sputtering
Cr-doped CZTS
Intermediate band solar cell
Issue Date: Aug-2024
Publisher: Elsevier
Abstract: Intermediate band (IB) materials, such as chromium-doped Cu2ZnSnS4 (CZTS:Cr) show promise for surpassing the Shockley-Queisser limit in solar cells. This study explores the effects of sulphur variation in this film. Sulphurization results in a layered structure, with Cr-poor micron-sized grains on top and Cr-rich nanograins at the bottom preventing complete crystallization. Optimization improves the Cu2ZnSnS4 (CZTS) crystallization and introduces additional absorption peaks at 1.15 eV and 1.31 eV, alongside the fundamental 1.55 eV absorption using 47.1 mg of sulphur content. CZTS:Cr device fabricated achieve a threefold increase in current density (Jsc) compared to undoped samples. These findings are crucial for advancing intermediate band solar cell (IBSC) based on CZTS:Cr IB material.
URI: http://dspace.aiub.edu:8080/jspui/handle/123456789/2535
ISSN: 0925-3467
Appears in Collections:Publications From Faculty of Engineering

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