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http://dspace.aiub.edu:8080/jspui/handle/123456789/722| Title: | Temperature Effects on Subthreshold Drain Current of Nano Scale Pocket Implanted n-MOSFET |
| Authors: | Bhuyan, Muhibul Haque Ferdous, Fouzia Khosru, Quazi Deen Mohd |
| Keywords: | Pocket implanted MOS device nano scaled n-MOSFET Temperature Effects Drain Current Threshold voltage Simulation |
| Issue Date: | 7-Mar-2013 |
| Citation: | M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, “Temperature Effects on Subthreshold Drain Current of Nano Scale Pocket Implanted n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 599-602. |
| Abstract: | Temperature fluctuations affect threshold voltage, carrier mobility and transit time of an n-MOSFET. This phenomenon induces the variations of drain current in the device. This paper presents an analytical model of the temperature effects of subthreshold drain current of pocket implanted n-MOSFET. The model has also been used to study the device behavior at low and high ambient temperatures. The model includes the effects of temperature on the threshold voltage, the carrier mobility and hence on the subthreshold drain current for nano scale pocket implanted n-MOSFET. |
| URI: | http://dspace.aiub.edu:8080/jspui/handle/123456789/722 |
| Appears in Collections: | Publications From Faculty of Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Draft_DSpace_Publication_Info_Upload_FE_Prof Muhibul IEEE ICECE Id_T.docx | 3.33 MB | Microsoft Word XML | View/Open |
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