Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET

Please use this identifier to cite or link to this item: http://dspace.aiub.edu:8080/jspui/handle/123456789/721

Title:	Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET
Authors:	Ferdous, Fouzia Bhuyan, Muhibul Haque Khosru, Quazi Deen Mohd
Keywords:	Pocket implanted MOS device nano scaled n-MOSFET Carrier diffusion time delay Linear Pocket Profile MOSFET model Simulation
Issue Date:	7-Mar-2013
Publisher:	IEEE
Citation:	F. Ferdous, M. H. Bhuyan, and Q. D. M. Khosru, “Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 603-606.
Abstract:	This paper presents an analytical model for the calculations of carrier diffusion time delay in pocket implanted nano scale n-MOSFET. The model is developed using the mobility model of the pocket implanted n-MOSFET developed previously. The developed model utilizes the linear pocket profile to derive the effective electric field that affects the mobility in the channel. The model has been studied using simulations for the various device and pocket profile parameters. The model will be useful to study the behaviour of the nano scaled pocket implanted n-MOSFET for high frequency operation.
URI:	http://dspace.aiub.edu:8080/jspui/handle/123456789/721
Appears in Collections:	Publications From Faculty of Engineering

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